first release copyright ? ixys corporation 2002 features ? built using the advantages and compatibility of cmos and ixys hdmos tm processes ? latch-up protected over entire operating range ? high peak output current: 2a peak ? wide operating range: 4.5v to 25v ? high capacitive load drive capability: 1000pf in <10ns ? matched rise and fall times ? low propagation delay time ? low output impedance ? low supply current ? two drivers in single chip applications ? driving mosfets and igbts ? motor controls ? line drivers ? pulse generators ? local power on/off switch ? switch mode power supplies (smps) ? dc to dc converters ? pulse transformer driver ? class d switching amplifiers general description the ixdn402/ixdi402/ixdf402 consists of two 2 amp cmos high speed mosfet drivers. each output can source and sink 2a of peak current while producing voltage rise and fall times of less than 15ns to drive the latest ixys mosfets & igbts. the input of the driver is ttl or cmos compatible and is fully immune to latch up over the entire operating range. a patent-pending circuit virtually eliminates cross conduction and current shoot-through. improved speed and drive capabilities are further enhanced by very low and matched rise and fall times. the ixdn402 is configured as a dual non-inverting gate driver, the ixdi402 as a dual inverting gate driver, and the ixdf402 as a dual inverting + non-inverting gate driver. the ixdn402/ixdi402/ixdf402 family are available in the standard 8 pin p-dip (pi), sop-8 (si) and sop-16 (si-16) packages respectively. ixdn402pi / n402si / n402si-16 ixdi402pi / i402si / i402si-16 ixdf402pi / f402si / f402si-16 2 ampere dual low-side ultrafast mosfet drivers part number package type temp. range configuration ixdn402pi 8-pin pdip ixdn402si 8-pin soic ixdn402si-16 16-pin soic -40 c to +85 c dual non inverting ixdi402pi 8-pin pdip ixdi402si 8-pin soic ixdi402si-16 16-pin soic -40 c to +85 c dual inverting ixdf402pi 8-pin pdip ixdf402si 8-pin soic ixdf402si-16 16-pin soic -40 c to +85 c inverting + non inverting ordering information note: mounting or solder tabs on all packages are connected to ground
2 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 n p n p out a vcc out b in a in b gnd anti-cross conduction circuit * anti-cross conduction circuit * figure 1 - ixdn402 dual 2a non-inverting gate driver functional block diagram figure 2 - ixdi402 dual inverting 2a gate driver functional block diagram n p n p out a vcc out b in a in b gnd anti-cross conduction circuit * anti-cross conduction circuit * figure 3 - ixdf402 inverting + non-inverting 2a gate driver functional block diagram n p n p out a vcc out b in a in b gnd anti-cross conduction circuit * anti-cross conduction circuit * * patent pending
3 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 unless otherwise noted, t a = 25 o c, 4.5v v cc 25v . all voltage measurements with respect to gnd. ixdd402 configured as described in test conditions . all specifications are for one channel. electrical characteristics symbol parameter test conditions min typ max units v ih high input voltage 3 v v il low input voltage 2.4 v v in input voltage range -5 v cc + 0.3 v i in input current 0v v in v cc -10 10 a v oh high output voltage v cc - 0.025 v v ol low output voltage 0.025 v r oh output resistance @ output high v cc = 18v 3.7 4 ? r ol output resistance @ output low v cc = 18v 2.5 3 ? i peak peak output current v cc is 18v 2 a i dc continuous output current 1 a t r rise time c l =1000pf vcc=18v 7 8 10 ns t f fall time c l =1000pf vcc=18v 7 8 9 ns t ondly on-time propagation delay c l =1000pf vcc=18v 27 28 32 ns t offdly off-time propagation delay c l =1000pf vcc=18v 25 26 30 ns v cc power supply voltage 4.5 18 25 v i cc power supply current v in = 3.5v v in = 0v v in = + v cc 1 0 3 10 10 ma a a absolute maximum ratings (note 1) parameter value supply voltage 25 v all other pins -0.3 v to v cc + 0.3 v junction temperature 150 o c storage temperature -65 o c to 150 o c lead temperature (10 sec) 300 o c operating ratings parameter value operating temperature range -40 o c to 85 o c thermal impedance (to ambient) 8 pin pdip (pi) ( ja ) 210 o c/w 8 pin soic (si) ( ja ) 190 o c/w 16 pin soic (si-16) ( ja ) 190 o c/w specifications subject to change without notice
4 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 pin description figure 4 - characteristics test diagram note 1: operating the device beyond the parameters listed as ?absolute maximum ratings? may cause permanent damage to the device. typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. the guaranteed specifications apply only for the test conditions listed. exposure to absolute maximum rated conditions for extended periods may affect device reliability. caution: these devices are sensitive to electrostatic discharge; follow proper esd procedures when handling and assembling this component. 1 2 3 4 5 6 7 8 nc nc in a gnd in b out b vcc out a 10uf 25v vcc 1000 pf 1000 pf agilent 1147a current probe agilent 1147a current probe symbol function description in a a channel input a channel input signal-ttl or cmos compatible. gnd ground the system ground pin. internally connected to all circuitry, this pin provides ground reference for the entire chip. this pin should be connected to a low noise analog ground plane for optimum performance. in b b channel input b channel input signal-ttl or cmos compatible. out b b channel output b channel driver output. for application purposes, this pin is connected via a resistor to a gate of a mosfet/igbt. vcc supply voltage positive power-supply voltage input. this pin provides power to the entire chip. the range for this voltage is from 4.5v to 25v. out a a channel output a channel driver output. for application purposes, this pin is connected via a resistor to a gate of a mosfet/igbt.
5 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 output fall times vs. load capacitance 0 5 10 15 20 25 30 35 40 45 50 0 1000 2000 3000 4000 5000 6000 7000 load capacitance (pf) fall times (ns) 8v 10v 12v 14v 16v 18v output rise times vs. load capacitance 0 10 20 30 40 50 60 70 80 90 0 1000 2000 3000 4000 5000 6000 7000 load capacitance (pf) rise time (ns) 8v 10v 12v 14v 16v 18v output rise time vs. supply voltage cl = 100pf to 6800pf 0 10 20 30 40 50 60 70 80 90 8 1012141618 supply voltage (v) rise time (ns ) 100 pf 470 pf 1000 pf 2200 pf 3900 pf 6800 pf output rise and fall times vs. case temperature cl = 1000pf, vcc = 18v 0 2 4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 temperature (c) time (ns) t r t f output fall time vs. supply voltage cl = 100pf to 6800pf 0 10 20 30 40 50 60 8 10121416 18 supply voltage (v) fall time (ns ) 100 pf 470 pf 1000 pf 2200 pf 3900 p f 6800 pf fig. 3 typical performance characteristics fig. 4 fig. 5 fig. 6 fig. 7 fig. 8 max / min input vs. temperature cl = 1000 pf vcc = 18v 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 temperature (c) max / min input voltage mi n i mu m i n p u t hi g h ma x i mu m i n p u t l o w
6 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 supply current vs. load capacitance vcc = 18v 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 load capacitance (pf) supply current (ma) 10 khz 50 khz 100 khz 500 khz 1 mhz 2 mhz supply current vs. frequency vcc = 12v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 frequency (khz) supply current (ma) 100 pf 470 p f 1000 pf 2200 pf 3900 p f 6800 p f supply current vs. frequency vcc = 18v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 frequency (khz) supply current (ma) 100 pf 470 pf 1000 pf 3900 pf 6800 p f 2200 pf supply current vs. load capacitance vcc = 12v 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 load capacitance (pf) supply current (ma) 10 khz 50 khz 100 khz 500 khz 1 mhz 2 mhz fig. 10 fig. 12 fig. 14 supply current vs. load capacitance vcc = 8v 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 load capacitance (pf) supply current (ma) 10 khz 50 khz h 100 khz 500 khz 1 mhz 2 mhz supply current vs. frequency vcc = 8v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 frequency (khz) supply current (ma) 100 pf 47 0 p f 1000 pf 2200 p f 3900 pf 6800 pf fig. 9 fig. 11 fig. 13
7 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 quiescent supply current vs. temperature vcc = 18v, vin = 5v@ 1khz, cl = 1000pf 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 temperature (c) quiescent vcc in p ut current ( ma ) propagation delay vs. input voltage cl = 1000 pf vcc = 15v 0 5 10 15 20 25 30 35 40 45 50 23456789101112 input voltage (v) propagation delay (ns) t ondly t offdly propagation delay times vs. temperature cl = 1000pf, vcc = 18v 10 15 20 25 30 35 40 -60 -40 -20 0 20 40 60 80 100 120 140 temperature (c) time (ns) t ondly t offdly propagation delay vs. supply voltage cl=1000 pf vin=5v@1khz 0 5 10 15 20 25 30 35 40 45 8 1012141618 supply voltage (v) propagation delay (ns) t ondly t offdly fig. 16 fig. 15 fig. 17 fig. 18 fig. 19 fig. 20 n channel sink output current vs. temperature vcc = 18v cl = 1000 pf 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 temperature (c) n channel output current (a) p channel output source current vs. temperature vcc = 18v, cl = 1000 pf 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -40 -20 0 20 40 60 80 100 120 140 temperature (c) p channel output current (a)
8 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 vcc vs. n channel source output current 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 7 9 11 13 15 17 19 21 23 25 vcc (v) n channel output current ( a low state output resistance vs. supply voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 7 9 11 13 15 17 19 21 23 25 supply voltage (v) low state output resistance (ohms) high state output resistance vs. supply voltage 0 1 2 3 4 5 6 7 8 7 9 11 13 15 17 19 21 23 25 supply voltage (v) high state output resistance (ohms) fig. 21 fig. 22 fig. 23 fig. 24 vcc vs. p channel output current -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 7 9 11 13 15 17 19 21 23 25 vcc (v) p channel output current (a)
9 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 pin configurations 1 2 3 4 5 6 7 8 in a gnd inb out a v s out b nc nc 8 lead pdip (pi) 8 pin soic (si) ixdn402 1 2 3 4 5 6 7 8 in a gnd inb out a v s out b nc nc 8 lead pdip (pi) 8 pin soic (si) ixdi402 16 pin soic ixdn402si-16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 nc in a nc gnd gnd nc in b nc nc out b out b vcc vcc out a out a nc 1 2 3 4 5 6 7 8 in a gnd inb out a v s out b nc nc 8 lead pdip (pi) 8 pin soic (si) ixdf402 16 pin soic ixdi402si-16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 nc in a nc gnd gnd nc in b nc nc out b out b vcc vcc out a out a nc 16 pin soic ixdf402si-16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 nc in a nc gnd gnd nc in b nc nc out b out b vcc vcc out a out a nc when designing a circuit to drive a high speed mosfet utilizing the ixdn402/ixdi402/ixdf402, it is very important to observe certain design criteria in order to optimize performance of the driver. particular attention needs to be paid to supply bypassing , grounding , and minimizing the output lead inductance . say, for example, we are using the ixdn402 to charge a 1500pf capacitive load from 0 to 25 volts in 25ns . using the formula: i= ? v c / ? t, where ? v=25v c=1500pf & ? t=25ns, we can determine that to charge 1500pf to 25 volts in 25ns will take a constant current of 1.5a. (in reality, the charging current won?t be constant, and will peak somewhere around 2a). supply bypassing in order for our design to turn the load on properly, the ixdn402 must be able to draw this 1.5a of current from the power supply in the 25ns. this means that there must be very low impedance between the driver and the power supply. the most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is an order of magnitude larger than the load capacitance. usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (these capacitors should be carefully selected and should have low inductance, low resistance and high-pulse current-service ratings). lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the ixdn402 to an absolute minimum. grounding in order for the design to turn the load off properly, the ixdn402 must be able to drain this 1.5a of current into an adequate grounding system. there are three paths for returning current that need to be considered: path #1 is between the ixdn402 and its load. path #2 is between the ixdn402 and its power supply. path #3 is between the ixdn402 and whatever logic is driving it. all three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. in addition, every effort should be made to keep these three ground paths distinctly separate. otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the ixdn402. output lead inductance of equal importance to supply bypassing and grounding are issues related to the output lead inductance. every effort should be made to keep the leads between the driver and its load as short and wide as possible. if the driver must be placed farther than 2? (5mm) from the load, then the output leads should be treated as transmission lines. in this case, a twisted- pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connected directly to the ground terminal of the load. supply bypassing, grounding practices and output lead inductance
10 ixdn402pi / n402si / n402si-16 ixdn402pi / n402si / n402si-16 ixdf402pi / f402si / f402si-16 ixys semiconductor gmbh edisonstrasse15 ; d-68623; lampertheim tel: +49-6206-503-0; fax: +49-6206-503627 e-mail: marcom@ixys.de ixys corporation 3540 bassett st; santa clara, ca 95054 tel: 408-982-0700; fax: 408-496-0670 e-mail: sales@ixys.net www.ixys.com directed energy, inc. an ixys company 2401 research blvd. ste. 108, ft. collins, co 80526 tel: 970-493-1901; fax: 970-493-1903 e-mail: deiinfo@directedenergy.com www.directedenergy.com doc #9200-0254 r1
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